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遥遥领先Renesas Oscillator噪音来源

2023-09-19 17:46:01 

遥遥领先Renesas Oscillator噪音来源,在我经常梦想的理想数字世界中,信号电压裕量总是正的,信号时序裕量总是正的,电源电压总是在工作电压范围内,我们的环境完全是良性的。

不幸的是,我们都没有生活在这个理想的世界里,无论我多么想。现实世界又脏又吵,我们设计中的功率分配从来都不是完美的。电源电压可能会降至工作电压范围以下,导致系统故障或失效,开关瞬变会产生噪声并降低信号裕量,阻抗不连续会使信号失真并降低信号裕量。图15

更糟糕的是,我们还要应对来自内部和外部的辐射或传导噪声,静电放电和雷电浪涌会中断或破坏系统,热应力、机械应力和组件老化都会导致系统故障。在这个简短的博客系列中,我想看看这些问题,以及我们可以在设计中应用的措施,以消除或至少最小化这些问题。

在第一篇博客中,我想看看一些典型的有源晶振噪音来源。此处显示的表格显示了两种类型的电磁兼容性或EMC。EMC被定义为电子设备在其预期电磁环境中正常工作的能力。

EMC包括两种不同的类型:EMI或电磁干扰,以及EMS或电磁敏感性。EMI通常被称为辐射噪声,指噪声引起的干扰,而EMS则被称为噪声敏感度,指噪声对系统造成的损害。

在下表中,您可以看到不同类型的EMC及其引起的典型现象。第三栏列出了一些典型产品,它们可能会受到EMI和EMS的影响,导致工作干扰或系统损坏。这个列表并不完整,只是为了展示一些典型的例子。

图16

25年前,我在处理类似H8系列的器件,这些器件采用当时相当先进的工艺技术,使用1.0μm甚至0.8μm CMOS技术。今天的石英晶体振荡器器件使用更先进的工艺技术,我们RA微控制器系列的最新器件采用40纳米技术,线宽比我以前使用的H8小25倍。

随着最新器件中的晶体管尺寸变得更小,并且更重要的是,晶体管开关频率变得更快,噪声成为导致器件故障的一个越来越大的因素。遥遥领先Renesas Oscillator噪音来源.图17

在上图中,您可以看到使用旧技术的器件与最新器件之间的简单比较,前者的晶体管工作沟道长度为1μm,器件通常采用当时的快速8 MHz时钟工作,晶体管开关速度较慢,后者的晶体管沟道长度为40 nm,工作频率高达200 MHz或更高。

在这种情况下,您可以看到切换时间要快得多,对于最新的晶体振荡器设备,我们试图处理的信号可能比噪声信号更快。因此,随着我们向更小的工艺几何发展,噪声已经成为一个更大的问题。瑞萨在我们的设备上采取了许多措施,设计了有助于在这种环境下工作的功能,精心设计的电源电路和优化的I/O缓冲器以及专业保护电路,但尽可能将设计中的任何影响降至最低仍然非常重要,因为最终,如果噪声进入设备,就很难消除。

Mfr Part # Mfr Description Series Frequency Output Voltage - Supply
XLH738000.921600X Renesas晶振 XTAL OSC XO 921.6000KHZ HCMOS XL 921.6 kHz HCMOS 3.3V
XLH336029.500000I Renesas晶振 XTAL OSC XO 29.5000MHZ HCMOS SMD XL 29.5 MHz HCMOS 3.3V
XLH735015.360000I Renesas晶振 XTAL OSC XO 15.3600MHZ HCMOS SMD XL 15.36 MHz HCMOS 3.3V
XLH736045.000000X Renesas晶振 XTAL OSC XO 45.0000MHZ HCMOS SMD XL 45 MHz HCMOS 3.3V
XAH526033.300000I Renesas晶振 XTAL OSC XO 33.3000MHZ LVCMOS XA 33.3 MHz LVCMOS 2.5V
XLH336013.330000I Renesas晶振 XTAL OSC XO 13.3300MHZ LVCMOS XL 13.33 MHz LVCMOS 3.3V
XLH336037.125000I Renesas晶振 XTAL OSC XO 37.1250MHZ LVCMOS XL 37.125 MHz LVCMOS 3.3V
XLH336002.048000I Renesas晶振 XTAL OSC XO 2.0480MHZ LVCMOS SMD XL 2.048 MHz LVCMOS 3.3V
XLH336032.051655I Renesas晶振 XTAL OSC XO 32.051655MHZ LVCMOS XL 32.051655 MHz LVCMOS 3.3V
XLH328033.333000X Renesas晶振 XTAL OSC XO 33.3330MHZ LVCMOS XL 33.333 MHz LVCMOS 2.5V
XLH336033.330000I Renesas晶振 XTAL OSC XO 33.3300MHZ LVCMOS XL 33.33 MHz LVCMOS 3.3V
XLH336031.948512I Renesas晶振 XTAL OSC XO 31.948512MHZ LVCMOS XL 31.948512 MHz LVCMOS 3.3V
XLH336019.000000I Renesas晶振 XTAL OSC XO 19.0000MHZ LVCMOS XL 19 MHz LVCMOS 3.3V
XLH730030.875520I Renesas晶振 XTAL OSC XO 30.87552MHZ LVCMOS XL 30.87552 MHz LVCMOS 3.3V
XLH535003.686000I Renesas晶振 XTAL OSC XO 3.6860MHZ LVCMOS SMD XL 3.686 MHz LVCMOS 3.3V
XLH736078.125000X Renesas晶振 XTAL OSC XO 78.1250MHZ LVCMOS XL 78.125 MHz LVCMOS 3.3V
XLH736025.750000X Renesas晶振 XTAL OSC XO 25.7500MHZ LVCMOS XL 25.75 MHz LVCMOS 3.3V
XLH535013.330000I Renesas晶振 XTAL OSC XO 13.3300MHZ LVCMOS XL 13.33 MHz LVCMOS 3.3V
XLH338040.953873X Renesas晶振 XTAL OSC XO 40.953873MHZ LVCMOS XL 40.953873 MHz LVCMOS 3.3V
XLH300000.000000K Renesas晶振 XTAL OSC XO HCMOS SMD XL - HCMOS -
XLH335006.005284K Renesas Oscillator XTAL OSC XO 6.005284MHZ HCMOS XL 6.005284 MHz HCMOS 3.3V
XLH528031.250000X Renesas晶振 XTAL OSC XO 31.2500MHZ LVCMOS XL 31.25 MHz LVCMOS 2.5V
XLH526031.250000I Renesas晶振 XTAL OSC XO 31.2500MHZ LVCMOS XL 31.25 MHz LVCMOS 2.5V
XLH53V026.000000I Renesas晶振 XTAL OSC VCXO 26.0000MHZ LVCMOS XL 26 MHz LVCMOS 3.3V
XLH535133.333333I Renesas晶振 XTAL OS XO 133.333333MHZ LVCMOS XL 133.333333 MHz LVCMOS 3.3V
XLH535133.330000I Renesas晶振 XTAL OSC XO 133.3300MHZ LVCMOS XL 133.33 MHz LVCMOS 3.3V
XLH736122.906000I Renesas晶振 OSC 122.906MHZ SMD * - - -
XLH335074.250000K Renesas晶振 XTAL OSC XO 74.2500MHZ LVCMOS XL 74.25 MHz LVCMOS 3.3V
XLH335037.125000K Renesas晶振 XTAL OSC XO 37.1250MHZ LVCMOS XL 37.125 MHz LVCMOS 3.3V
XLH330002.097152K Renesas晶振 XTAL OSC XO 2.097152MHZ LVCMOS XL 2.097152 MHz LVCMOS 3.3V
XLH335008.000000K Renesas晶振 XTAL OSC XO 8.0000MHZ LVCMOS SMD XL 8 MHz LVCMOS 3.3V
XLH335003.200000K Renesas晶振 XTAL OSC XO 3.2000MHZ LVCMOS SMD XL 3.2 MHz LVCMOS 3.3V
XLH335126.488100K Renesas晶振 XTAL OSC XO 126.4881MHZ LVCMOS XL 126.4881 MHz LVCMOS 3.3V
XLH335100.000000K Renesas晶振 XTAL OSC XO 100.0000MHZ LVCMOS XL 100 MHz LVCMOS 3.3V
XAH335033.333000X Renesas晶振 CLCC 3.20X2.50X0.90 MM, 2.10MM P XA 33.333 MHz HCMOS 3.3V
XAH335033.333333X Renesas晶振 CLCC 3.20X2.50X0.90 MM, 2.10MM P XA 33.333333 MHz HCMOS 3.3V
XAH335060.000000X Renesas晶振 CLCC 3.20X2.50X0.90 MM, 2.10MM P XA 60 MHz HCMOS 3.3V
XLH535036.000000K Renesas晶振 XTAL OSC XO 36.0000MHZ LVCMOS XL 36 MHz LVCMOS 3.3V
XAH335080.000000K Renesas晶振 OSC XO 80.0000MHZ LVCMOS SMD XA 80 MHz LVCMOS 3.3V
XLH3AA100.000000I Renesas晶振 XTAL OSC XO 100.0000MHZ HCMOS XL 100 MHz HCMOS -
XLH3AA125.000000I Renesas晶振 XTAL OSC XO 125.0000MHZ HCMOS XL 125 MHz HCMOS -
XLH3AA025.000000I Renesas晶振 XTAL OSC XO 25.0000MHZ HCMOS SMD XL 25 MHz HCMOS -
XLH536001.843200I Renesas晶振 XTAL OSC XO 1.8432MHZ HCMOS SMD XPRESSOFXO-HC53 1.8432 MHz HCMOS 3.3V
XLH536033.000000I Renesas晶振 XTAL OSC XO 33.0000MHZ HCMOS SMD XPRESSOFXO-HC53 33 MHz HCMOS 3.3V
XLH536004.000000I Renesas晶振 XTAL OSC XO 4.0000MHZ HCMOS SMD XPRESSOFXO-HC53 4 MHz HCMOS 3.3V
XLH536062.500000I Renesas晶振 XTAL OSC XO 62.5000MHZ HCMOS SMD XPRESSOFXO-HC53 62.5 MHz HCMOS 3.3V
XLH736060.000000I Renesas晶振 XTAL OSC XO 60.0000MHZ HCMOS SMD XPRESSOFXO-HC73 60 MHz HCMOS 3.3V
XLH736062.500000I Renesas晶振 XTAL OSC XO 62.5000MHZ HCMOS SMD XPRESSOFXO-HC73 62.5 MHz HCMOS 3.3V
XLH736066.000000I Renesas晶振 XTAL OSC XO 66.0000MHZ HCMOS SMD XPRESSOFXO-HC73 66 MHz HCMOS 3.3V
XLH536016.384000I Renesas晶振 XTAL OSC XO 16.3840MHZ HCMOS SMD XPRESSOFXO-HC53 16.384 MHz HCMOS 3.3V
XLH536066.000000I Renesas晶振 XTAL OSC XO 66.0000MHZ HCMOS SMD XPRESSOFXO-HC53 66 MHz HCMOS 3.3V
XLH736014.318180I Renesas晶振 XTAL OSC XO 14.31818MHZ HCMOS XPRESSOFXO-HC73 14.31818 MHz HCMOS 3.3V
XLH736016.384000I Renesas晶振 XTAL OSC XO 16.3840MHZ HCMOS SMD XPRESSOFXO-HC73 16.384 MHz HCMOS 3.3V
XLH736003.686400I Renesas晶振 XTAL OSC XO 3.6864MHZ HCMOS SMD XPRESSOFXO-HC73 3.6864 MHz HCMOS 3.3V
XLH320180.000000I Renesas晶振 XTAL OSC XO 180.0000MHZ HCMOS XPRESSOFXO-HC32 180 MHz HCMOS 2.5V
XLH335250.000000I Renesas晶振 XTAL OSC XO 250.0000MHZ HCMOS XPRESSOFXO-HC33 250 MHz HCMOS 3.3V
XLH526100.000000I Renesas晶振 XTAL OSC XO 100.0000MHZ HCMOS XPRESSOFXO-HC52 100 MHz HCMOS 2.5V
XLH535225.060000I Renesas晶振 XTAL OSC XO 225.0600MHZ HCMOS XPRESSOFXO-HC53 225.06 MHz HCMOS 3.3V
XLH535156.250000I Renesas晶振 XTAL OSC XO 156.2500MHZ HCMOS XPRESSOFXO-HC53 156.25 MHz HCMOS 3.3V
XLH536156.250000X Renesas晶振 XTAL OSC XO 156.2500MHZ HCMOS XPRESSOFXO-HC53 156.25 MHz HCMOS 3.3V
XLH536135.000000X Renesas晶振 XTAL OSC XO 135.0000MHZ HCMOS XPRESSOFXO-HC53 135 MHz HCMOS 3.3V
XLH536114.775489I Renesas晶振 XTAL OSC XO 114.775489MHZ HCMOS XPRESSOFXO-HC53 114.775489 MHz HCMOS 3.3V
XLH536098.304000I Renesas晶振 XTAL OSC XO 98.3040MHZ HCMOS SMD XPRESSOFXO-HC53 98.304 MHz HCMOS 3.3V
XLH536088.000000I Renesas晶振 XTAL OSC XO 88.0000MHZ HCMOS SMD XPRESSOFXO-HC53 88 MHz HCMOS 3.3V
XLH536066.666000I Renesas晶振 XTAL OSC XO 66.6660MHZ HCMOS SMD XPRESSOFXO-HC53 66.666 MHz HCMOS 3.3V
XLH536044.545000I Renesas晶振 XTAL OSC XO 44.5450MHZ HCMOS SMD XPRESSOFXO-HC53 44.545 MHz HCMOS 3.3V
XLH536033.330000I Renesas晶振 XTAL OSC XO 33.3300MHZ HCMOS SMD XPRESSOFXO-HC53 33.33 MHz HCMOS 3.3V
XLH536013.300000I Renesas晶振 XTAL OSC XO 13.3000MHZ HCMOS SMD XPRESSOFXO-HC53 13.3 MHz HCMOS 3.3V
XLH536006.000000I Renesas晶振 XTAL OSC XO 6.0000MHZ HCMOS SMD XPRESSOFXO-HC53 6 MHz HCMOS 3.3V
XLH536002.048000I Renesas晶振 XTAL OSC XO 2.0480MHZ HCMOS SMD XPRESSOFXO-HC53 2.048 MHz HCMOS 3.3V
XLH538100.000000X Renesas晶振 XTAL OSC XO 100.0000MHZ HCMOS XPRESSOFXO-HC53 100 MHz HCMOS 3.3V
XLH538074.250000X Renesas晶振 XTAL OSC XO 74.2500MHZ HCMOS SMD XPRESSOFXO-HC53 74.25 MHz HCMOS 3.3V
XLH538050.000000X Renesas晶振 XTAL OSC XO 50.0000MHZ HCMOS SMD XPRESSOFXO-HC53 50 MHz HCMOS 3.3V
XLH538048.000000X Renesas晶振 XTAL OSC XO 48.0000MHZ HCMOS SMD XPRESSOFXO-HC53 48 MHz HCMOS 3.3V
XLH538040.000000X Renesas晶振 XTAL OSC XO 40.0000MHZ HCMOS SMD XPRESSOFXO-HC53 40 MHz HCMOS 3.3V
XLH538033.000000X Renesas晶振 XTAL OSC XO 33.0000MHZ HCMOS SMD XPRESSOFXO-HC53 33 MHz HCMOS 3.3V
XLH538030.720000X Renesas晶振 XTAL OSC XO 30.7200MHZ HCMOS SMD XPRESSOFXO-HC53 30.72 MHz HCMOS 3.3V
XLH538025.000000X Renesas晶振 XTAL OSC XO 25.0000MHZ HCMOS SMD XPRESSOFXO-HC53 25 MHz HCMOS 3.3V
XLH538020.000000X Renesas晶振 XTAL OSC XO 20.0000MHZ HCMOS SMD XPRESSOFXO-HC53 20 MHz HCMOS 3.3V
XLH538019.200000X Renesas晶振 XTAL OSC XO 19.2000MHZ HCMOS SMD XPRESSOFXO-HC53 19.2 MHz HCMOS 3.3V
XLH538013.500000X Renesas晶振 XTAL OSC XO 13.5000MHZ HCMOS SMD XPRESSOFXO-HC53 13.5 MHz HCMOS 3.3V
XLH538013.000000X Renesas晶振 XTAL OSC XO 13.0000MHZ HCMOS SMD XPRESSOFXO-HC53 13 MHz HCMOS 3.3V
XLH538012.288000X Renesas晶振 XTAL OSC XO 12.2880MHZ HCMOS SMD XPRESSOFXO-HC53 12.288 MHz HCMOS 3.3V
XLH538012.000000X Renesas晶振 XTAL OSC XO 12.0000MHZ HCMOS SMD XPRESSOFXO-HC53 12 MHz HCMOS 3.3V
XLH538010.000000X Renesas晶振 XTAL OSC XO 10.0000MHZ HCMOS SMD XPRESSOFXO-HC53 10 MHz HCMOS 3.3V
In my ideal digital world, of which I often dream, signal voltage margins are always positive, signal timing margins are always positive, power supply voltages are always within the operating voltage range, and our environment is completely benign.

Unfortunately, none of us live in this ideal world, no matter how much I would like to. The real world is dirty and noisy, and the power distribution in our designs is never perfect. The supply voltage can drop below the operating voltage range resulting in system malfunction or failure, switching transients create noise and reduce signal margins, and impedance discontinuities distort signals reducing signal margins.

Then to make matters worse, we have radiated or conducted noise from internal and external sources to contend with, electrostatic discharge and lightning surges interrupt or destroy systems, and thermal stress, mechanical stress, and component aging all can cause systems to fail. In this short series of blogs, I’d like to look at some of these issues and the measures we can apply to our designs to remove or at least minimize some of these issues.

In this first blog, I’d like to look at some of the typical sources of noise. The table shown here shows the two types of Electromagnetic compatibility or EMC. EMC is defined as the ability of electronic devices to function properly in their intended electromagnetic environment.

EMC comprises two distinct types: EMI or electromagnetic interference, and EMS or electromagnetic susceptibility. EMI is generally known as radiated noise and refers to the disturbances caused by noise, whereas EMS is known as Noise Susceptibility and refers to the damage done to the system due to noise.

In the table below, you can see the different types of EMC and the typical sort of phenomena that they cause. The third column lists some typical products that can be affected by EMI and EMS, resulting in disturbance in operation or damage to the system. This list is by no means complete and is meant only to show some typical examples.

Twenty-five years ago, I was dealing with devices like those in our H8 family, which were implemented on what was then quite advanced process technology, using 1.0μm or even 0.8μm CMOS technology. Today’s devices use significantly more advanced process technology, the latest devices in our RA microcontroller family being implemented on 40 nm technology, with line widths 25 times smaller than the H8 I used to use.

As the transistor size in the latest devices becomes smaller and, probably, more importantly, the transistor switching frequency becomes faster, noise becomes an increasing factor in terms of causing a device to malfunction.

In the diagram above, you can see a simplified comparison between a device using older technology, showing transistor operation with a channel length of 1μm, with the device typically operating from what was then a fast 8 MHz Clock, with a slow transistor switching speed and the latest devices operating at up to 200 MHz or beyond, with a transistor channel length is 40 nm.

In this case, you can see that the switching time is much faster, and for the latest devices, the signal we are trying to deal with can be faster than the noise signal. Therefore, noise has become a larger concern as we move toward smaller process geometry. Renesas has taken many steps on our devices, designing them with features to help operate in such an environment, with carefully designed power supply circuits and optimized I/O buffers and specialist protection circuitry, but it’s still very important to minimize any effects in our designs as much as possible, as at the end, if noise enters the device, it’s much harder to remove.



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