X1G0039010093,TG-5501CA微波基站晶振,爱普生有源TCXO晶振

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X1G0039010093,TG-5501CA微波基站晶振,爱普生有源TCXO晶振

频率：40MHZ

尺寸：7.0×5.0mm

X1G0039010093,TG-5501CA微波基站晶振,爱普生有源TCXO晶振，尺寸7.0×5.0mm，频率40MHZ，输出逻辑CMOS，EPSON进口晶振，日本有源晶振，7050mm温补晶振，四脚有源晶振，TCXO温补晶振，温度补偿晶体振荡器，石英温补晶振，贴片有源晶振，低相位有源晶振，低相噪有源晶振，低电压有源晶振，低抖动有源晶振，低损耗有源晶振，低功耗有源晶振，高可靠有源晶振，低电压电压有源晶振，网络同步有源晶振，微波基站有源晶振，北斗定位有源晶振，航空航天有源晶振，仪器设备有源晶振，测试设备有源晶振，具有低抖动高可靠性能的特点。

OSC晶振产品可广泛满足各大应用领域，适用于网络同步、Stratum3、微波BTS，测试设备，仪器设备，航空航天等应用。X1G0039010093,TG-5501CA微波基站晶振,爱普生有源TCXO晶振.

订购热线：0755-27838351

X1G0039010093,TG-5501CA微波基站晶振,爱普生有源TCXO晶振 参数表

Item

Symbol

CMOS

Clipped sine wave

Conditions / Remarks

VC-TCXO

TCXO

VC-TCXO

TCXO

Output frequency range

40 MHz

10, 12.8, 15.36, 16.384, 19.44, 20, 24,
24.576, 25, 26, 27, 30.72, 40, 49. 152, 50 MHz

Standard frequency

Supply voltage

VCC

3.3 V± 5%, 5.0 V± 5% (Supply voltage range :2.7 V to 5.5 V)

Storage temperature

T_stg

-40 °C to +90 °C

Storage as single product.

Operating temperature

T_use

-40 °C to +85 °C

a) Frequency tolerance

f_tol

± 1.0 ×10-6 Max.

After reflow, +25 °C

b) Frequency/temperature
characteristics

0-TC

±0.28 × 10-6 Max.(12.8 MHz元f0 元50 MHz)
±0.25 × 10-6 Max.(12.8 MHz元f0 元50 MHz): Option

-40 °C to +85 °C

±1.0 × 10-6 Max.(10 MHz元f0 <12.8 MHz)

c) Frequency/load coefficient

0-Load

±0. 1 × 10-6 Max.

Load ±10 %

d) Frequency/voltage coefficient

0-VCC

±0. 1 ×10-6 Max.

VCC ±5%

e) Frequency aging

f_age

±0.5 ×10-6 Max.

+25 °C , First year

±3.0 ×10-6 Max. (for Stratum3)

+25 °C , 20 years

Holdover stability
(Constant temperature)

±0.01 × 10-6 Max.( +25 °C , 24 hours)

After 10 days of continuous operation .

±0.04 × 10-6 Max.( +25 °C , 24 hours)

After 48 hours of continuous operation .

Free-run accuracy

±4.6 × 10-6 Max. (12.8 MHz元f0 元50 MHz)

This includes Item a),b),c),d)and e)

Current consumption

ICC

5.0 mA Max. / 6.0 mA Max.

5.0 mA Max.

10 MHz元f0 元26 MHz (3.3V / 5.0V)

6.0 mA Max. / 8.0 mA Max.

26 MHz

8.0 mA Max. / 10.0 mA Max.

40 MHz

Input resistance

Rin

100 k? Min.

VC- GND (DC)

Frequency control range

f_cont

±5.0 × 10-6 to
±12.0 ×10-6

±5.0 × 10-6 to ±12.0
×10-6

VC=1.65 V ± 1.65 V at VCC=3.3V
VC=2.5 V ± 2.0 V at VCC=5.0V

Frequency change polarity

Positive polarity

Symmetry

SYM

45 % to 55 %

GND level (DC cut)

Output voltage

VOH

90 % VCC Min.

VOL

10 % VCC Max.

Output level

VPP

0.8 V Min.

Peak to Peak

Rise time / Fall time

tr/tf

8.0 ns Max.

10% Vcc to 90 % Vcc level,Load:15 pF

Start-up time

t_str

2.0 sec. Max.

T=0 at 90% Vcc

Output load condition

Load

15 pF

10 kQ// 10 pF

Input voltage

VIH

70% VCC Min.

OE terminal(Enable voltage)

VIL

30% VCC Max.

OE terminal(Disable voltage)

X1G0039010093,TG-5501CA微波基站晶振,爱普生有源TCXO晶振 尺寸图

X1G0039010093,TG-5501CA微波基站晶振,爱普生有源TCXO晶振

TCXO晶振产品特性：

频率范围：10MHz至50MHz

电源电压：3.3V Typ./5.0V类型。

频率/温度特性：±0.28×10-6最大值（Stratum3）

频率老化：±3.0×10-6最大/20年（Stratum3）

外部尺寸：7.0×5.0×1.5 mm（10个衬垫或4个衬垫）

Product Number	Model	Frequency	LxWxH	Output Wave	晶振厂家	Supply Voltage	F.Tol@25°C
X1G0038410010	TG-5035CJ	33.600000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	1.700 to 3.300 V	+/-1.5 ppm
X1G0038410011	TG-5035CJ	16.369000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	1.700 to 1.900 V	+/-2.0 ppm
X1G0038410015	TG-5035CJ	26.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	1.700 to 1.900 V	+/-2.5 ppm
X1G0038410017	TG-5035CJ	26.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	1.700 to 1.900 V	+/-1.5 ppm
X1G0038410026	TG-5035CJ	38.400000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	1.700 to 1.900 V	+/-2.0 ppm
X1G0038410027	TG-5035CJ	52.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	1.700 to 1.900 V	+/-2.0 ppm
X1G0038410029	TG-5035CJ	16.368000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	1.700 to 3.300 V	+/-2.0 ppm
X1G0038410030	TG-5035CJ	24.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	2.600 to 3.000 V	+/-2.0 ppm
X1G0038410033	TG-5035CJ	16.369000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	1.700 to 1.900 V	+/-2.0 ppm
X1G0038410034	TG-5035CJ	26.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	1.700 to 3.300 V	+/-2.0 ppm
X1G0038410040	TG-5035CJ	24.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	2.600 to 3.000 V	+/-2.0 ppm
X1G0038410048	TG-5035CJ	16.368000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	1.700 to 3.300 V	+/-2.0 ppm
X1G0038410052	TG-5035CJ	26.000000 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	1.700 to 1.900 V	+/-1.5 ppm
X1G0038410054	TG-5035CJ	16.367667 MHz	2.00 x 1.60 x 0.73 mm	Clipped sine wave	爱普生晶振	1.700 to 3.300 V	+/-2.0 ppm
X1G0038510014	TG-5035CG	16.369000 MHz	2.50 x 2.00 x 0.80 mm	Clipped sine wave	爱普生晶振	1.700 to 1.900 V	+/-2.0 ppm
X1G0038510016	TG-5035CG	16.368000 MHz	2.50 x 2.00 x 0.80 mm	Clipped sine wave	爱普生晶振	2.660 to 2.940 V	+/-2.0 ppm
X1G0038510032	TG-5035CG	24.000000 MHz	2.50 x 2.00 x 0.80 mm	Clipped sine wave	爱普生晶振	3.135 to 3.465 V	+/-2.0 ppm
X1G0038510039	TG-5035CG	32.000000 MHz	2.50 x 2.00 x 0.80 mm	Clipped sine wave	爱普生晶振	1.700 to 3.300 V	+/-1.0 ppm
X1G0038510042	TG-5035CG	40.000000 MHz	2.50 x 2.00 x 0.80 mm	Clipped sine wave	爱普生晶振	1.700 to 3.300 V	+/-2.0 ppm
X1G0038510043	TG-5035CG	38.400000 MHz	2.50 x 2.00 x 0.80 mm	Clipped sine wave	爱普生晶振	1.700 to 1.900 V	+/-1.5 ppm
X1G0038510049	TG-5035CG	16.369000 MHz	2.50 x 2.00 x 0.80 mm	Clipped sine wave	爱普生晶振	1.700 to 3.300 V	+/-2.0 ppm
X1G0038510051	TG-5035CG	33.600000 MHz	2.50 x 2.00 x 0.80 mm	Clipped sine wave	爱普生晶振	1.700 to 3.300 V	+/-1.0 ppm
X1G0038510077	TG-5035CG	24.000000 MHz	2.50 x 2.00 x 0.80 mm	Clipped sine wave	爱普生晶振	1.700 to 3.600 V	+/-2.0 ppm
X1G003851A058	TG-5035CG	26.000000 MHz	2.50 x 2.00 x 0.80 mm	Clipped sine wave	爱普生晶振	1.700 to 1.900 V	+/-2.0 ppm
X1G0039010051	TG-5501CA	24.576000 MHz	7.00 x 5.00 x 1.50 mm	CMOS	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010057	TG-5501CA	49.152000 MHz	7.00 x 5.00 x 1.50 mm	CMOS	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010083	TG-5501CA	27.000000 MHz	7.00 x 5.00 x 1.50 mm	CMOS	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010085	TG-5501CA	15.360000 MHz	7.00 x 5.00 x 1.50 mm	CMOS	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010087	TG-5501CA	26.000000 MHz	7.00 x 5.00 x 1.50 mm	CMOS	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010089	TG-5501CA	16.384000 MHz	7.00 x 5.00 x 1.50 mm	CMOS	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010090	TG-5501CA	25.000000 MHz	7.00 x 5.00 x 1.50 mm	CMOS	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010091	TG-5501CA	19.440000 MHz	7.00 x 5.00 x 1.50 mm	CMOS	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010093	TG-5501CA	40.000000 MHz	7.00 x 5.00 x 1.50 mm	CMOS	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010095	TG-5501CA	20.000000 MHz	7.00 x 5.00 x 1.50 mm	CMOS	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010097	TG-5501CA	50.000000 MHz	7.00 x 5.00 x 1.50 mm	CMOS	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010098	TG-5501CA	10.000000 MHz	7.00 x 5.00 x 1.50 mm	CMOS	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010101	TG-5501CA	10.000000 MHz	7.00 x 5.00 x 1.50 mm	Clipped sine wave	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010102	TG-5501CA	12.800000 MHz	7.00 x 5.00 x 1.50 mm	Clipped sine wave	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010103	TG-5501CA	16.384000 MHz	7.00 x 5.00 x 1.50 mm	Clipped sine wave	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010104	TG-5501CA	19.440000 MHz	7.00 x 5.00 x 1.50 mm	Clipped sine wave	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010107	TG-5501CA	25.000000 MHz	7.00 x 5.00 x 1.50 mm	Clipped sine wave	精工爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010108	TG-5501CA	26.000000 MHz	7.00 x 5.00 x 1.50 mm	Clipped sine wave	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010109	TG-5501CA	27.000000 MHz	7.00 x 5.00 x 1.50 mm	Clipped sine wave	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010200	TG-5501CA	30.720000 MHz	7.00 x 5.00 x 1.50 mm	Clipped sine wave	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010201	TG-5501CA	40.000000 MHz	7.00 x 5.00 x 1.50 mm	Clipped sine wave	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010202	TG-5501CA	49.152000 MHz	7.00 x 5.00 x 1.50 mm	Clipped sine wave	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010203	TG-5501CA	50.000000 MHz	7.00 x 5.00 x 1.50 mm	Clipped sine wave	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm
X1G0039010204	TG-5501CA	15.360000 MHz	7.00 x 5.00 x 1.50 mm	Clipped sine wave	爱普生晶振	3.135 to 3.465 V	+/-1.0 ppm