Microchip高性能晶体振荡器DSC1001CI1-025.0000为国防和通信设备提供极佳解决方案
Microchip高性能晶体振荡器DSC1001CI1-025.0000为国防和通信设备提供极佳解决方案,microchip Technology Incorporated这是一家为频率元器件提供完美解决方案的知名企业，同时也是一家技术领先的控制解决方案供应商。主要向世界各地提供性能优越，成本低的SMD晶振产品，并以高于用户满意度为最大的前提，通过使用的开发工具和全面的产品组合使客户能够创建最佳设计，从而降低风险，该公司的解决方案服务于工业、汽车、消费、航空航天和国防、通信和计算市场的120，000多家客户，微芯片提供卓越的技术支持以及可靠的交付和质量.
| Manufacturer Part Number原厂代码 | Manufacturer品牌 | Series型号 | Part Status | Type 类型 | Frequency 频率 | Voltage - Supply电压 | Ratings |
| DSC6111CI2A-012.0000 | Microchip晶振 | DSC6100 | Active | MEMS (Silicon) | 12MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC6102CI2A-100.0000 | Microchip晶振 | DSC6100 | Active | MEMS (Silicon) | 100MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC6101CI2A-050.0000 | Microchip晶振 | DSC6100 | Active | MEMS (Silicon) | 50MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC6101CI2A-025.0000 | Microchip晶振 | DSC6100 | Active | MEMS (Silicon) | 25MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC6003JI2A-048.0000 | Microchip晶振 | DSC60XX | Active | MEMS (Silicon) | 48MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC6101JI2A-026.0000 | Microchip晶振 | DSC6100 | Active | MEMS (Silicon) | 26MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC6101JI2A-048.0000 | Microchip晶振 | DSC6100 | Active | MEMS (Silicon) | 48MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC6003JI2A-016.0000 | Microchip晶振 | DSC60XX | Active | MEMS (Silicon) | 16MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC6101JI2A-012.2880 | Microchip晶振 | DSC6100 | Active | MEMS (Silicon) | 12.288MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC6101JI2A-050.0000 | Microchip晶振 | DSC6100 | Active | MEMS (Silicon) | 50MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC6102JI2A-100.0000 | Microchip晶振 | DSC6100 | Active | MEMS (Silicon) | 100MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC6111JI2A-024.0000 | Microchip晶振 | DSC6100 | Active | MEMS (Silicon) | 24MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC6101JI2A-012.0000 | Microchip晶振 | DSC6100 | Active | MEMS (Silicon) | 12MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC6101JI2A-027.0000 | Microchip晶振 | DSC6100 | Active | MEMS (Silicon) | 27MHz | 1.71 V ~ 3.63 V | AEC-Q100 |
| DSC1121CI2-050.0000 | Microchip晶振 | DSC1121 | Active | MEMS (Silicon) | 50MHz | 2.25 V ~ 3.6 V | AEC-Q100 |
| DSC1121CI2-025.0000 | Microchip晶振 | DSC1121 | Active | MEMS (Silicon) | 25MHz | 2.25 V ~ 3.6 V | AEC-Q100 |
| DSC1121BI2-025.0007 | Microchip晶振 | DSC1121 | Active | MEMS (Silicon) | 25.0007MHz | 2.25 V ~ 3.6 V | - |
| DSC1121AE2-025.0000 | Microchip晶振 | DSC1121 | Active | MEMS (Silicon) | 25MHz | 2.25 V ~ 3.6 V | AEC-Q100 |
| DSC1101CI1-025.0000 | Microchip晶振 | DSC1101 | Active | MEMS (Silicon) | 25MHz | 2.25 V ~ 3.6 V | - |
| DSC1001CC1-008.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 8MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1101DL1-027.0000 | Microchip晶振 | DSC1101 | Active | MEMS (Silicon) | 27MHz | 2.25 V ~ 3.6 V | - |
| DSC1001CE1-066.6666 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 66.6666MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001CE1-019.2000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 19.2MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1033CE2-022.5792 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 22.5792MHz | 3.3V | - |
| DSC1001DI1-004.9152 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 4.9152MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1033AE1-024.0000 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 24MHz | 3.3V | - |
| DSC1001AC1-027.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 27MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1033CE2-074.2500 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 74.25MHz | 3.3V | - |
| DSC1033BE1-050.0000 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 50MHz | 3.3V | - |
| DSC1001AC1-008.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 8MHz | 1.7 V ~ 3.6 V | AEC-Q100 |
| DSC1033DI1-048.0000 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 48MHz | 3.3V | - |
| DSC1001DI1-012.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 12MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001DI1-048.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 48MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1033DI1-064.0000 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 64MHz | 3.3V | - |
| DSC1033DI1-025.0000 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 25MHz | 3.3V | - |
| DSC1033CI1-008.1920 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 8.192MHz | 3.3V | - |
| DSC1033DI1-050.0000 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 50MHz | 3.3V | - |
| DSC1033DI1-024.0000 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 24MHz | 3.3V | - |
| DSC1033DI1-016.0000 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 16MHz | 3.3V | - |
| DSC1001DI1-020.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 20MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001CI1-025.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 25MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1033BI2-027.1200 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 27.12MHz | 3.3V | - |
| DSC1001DI1-032.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 32MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1033DI1-029.4912 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 29.4912MHz | 3.3V | - |
| DSC1001AE1-027.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 27MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001AE1-014.3182 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 14.3182MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001AE1-024.5761 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 24.5761MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001AE1-054.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 54MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001AE1-003.6864 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 3.6864MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001BE2-010.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 10MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001AE1-055.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 55MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1033CI1-001.0000 | Microchip晶振 | DSC1033 | Active | MEMS (Silicon) | 1MHz | 3.3V | - |
| DSC1004AI2-001.0000 | Microchip晶振 | DSC1004 | Active | MEMS (Silicon) | 1MHz | 1.8 V ~ 3.3 V | - |
| DSC1001CI1-003.6864 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 3.6864MHz | 1.7 V ~ 3.6 V | AEC-Q100 |
| DSC1001DI1-038.4000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 38.4MHz | 1.7 V ~ 3.6 V | AEC-Q100 |
| DSC1001AI2-064.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 64MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001BI1-048.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 48MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001CI2-001.9521 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 1.9521MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001CI2-010.4857 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 10.4857MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001CI2-008.1920 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 8.192MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001AI1-033.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 33MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001BI1-010.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 10MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001BI1-020.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 20MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001BI1-024.5760 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 24.576MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001BI1-027.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 27MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001BI2-014.3181 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 14.3181MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001BI2-014.7456 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 14.7456MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001BI2-016.3840 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 16.384MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001BI2-040.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 40MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001AI2-001.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 1MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
| DSC1001BI1-024.0000 | Microchip晶振 | DSC1001 | Active | MEMS (Silicon) | 24MHz | 1.8 V ~ 3.3 V | AEC-Q100 |
Microchip高性能晶体振荡器DSC1001CI1-025.0000为国防和通信设备提供极佳解决方案,产品特性：低均方根相位抖动:< 1 ps(典型值。)，高稳定性:10、25、50 ppm，汽车:-55摄氏度至125摄氏度，延伸文件系统工业级:-40摄氏度至105摄氏度，工业级:-40摄氏度至85摄氏度，延伸文件系统商用:-20摄氏度至70摄氏度，高电源噪声抑制:-50dBc，宽频率。范围:2.3至170兆赫。2.5毫米x 2.0mm毫米、3.2毫米x 2.5mm毫米、5.0毫米x 3.2mm毫米和7.0毫米x 5.0mm毫米，符合军用标准883，MTF比石英晶体振荡器高20倍，低电流消耗，电源电压范围为2.25V至3.6V，待机和输出使能功能，无铅且符合RoHS标准.
- 应用程序：存储区域网络，SATA、SAS、光纤通道 无源光网络 - EPON，10G-EPON，V GPON，10G-PON 以太网 - 1G、10GBASE-T/KR/LR/SR和FCoE 高清/标清/SDI视频和监控，PCI Express，显示端口.
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【本文标签】：Microchip高性能晶体振荡器DSC1001CI1 025.0000为国防和通信设备提供极佳解决方案
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